Electrophotographic amorphous silicon member
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United States of America Patent
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Dec 18, 1984
Issued Date -
N/A
app pub date -
Dec 19, 1983
filing date -
May 8, 1980
priority date (Note) -
Expired
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Abstract
The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.
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