Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
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United States of America Patent
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Dec 4, 1984
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N/A
app pub date -
Feb 2, 1981
filing date -
Jan 24, 1979
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Expired
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Abstract
A compact, floating gate, nonvolatile, electrically-alterable memory device fabricated with three layers of polysilicon and a substrate coupling electrode is described. A particular form of the device utilizes asperities to promote tunnel current flow through relatively thick oxides by means of relatively low average applied voltages. The use of four electrode layers leads to an extremely dense cell and memory array configuration. The substrate electrode is used to establish bias voltages in the cell.
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