Titanium-containing silicon nitride film bodies and a method of producing the same

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United States of America Patent

PATENT NO 4469801
SERIAL NO

06298109

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Abstract

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Titanium-containing silicon nitride film bodies include a film body having an essentially amorphous structure and containing particle-like titanium nitride, a film body consisting mainly of .alpha.-type crystal and containing particle-like TiN deposited in the crystal and having a crystal orientation of crystal face (OOl), and a film body consisting mainly of .beta.-type crystal and containing column-like TiN deposited in the crystal along the c-axis direction thereof and having a crystal orientation of crystal face (OOl), which are produced by blowing a nitrogen depositing source, a silicon depositing source and a titanium depositing source on a substrate heated at 500.degree.-1,900.degree. C. by means of a blowpipe composed of a pipe assembly to perform chemical vapordeposition reaction.

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Patent Owner(s)

Patent OwnerAddress
HAYASHI SHINSUKE4-1-1501 SAKURAGAOKA-KEON SENDAI CITY
HIRAI TOSHIO4-91 3-CHOME TAKAMORI IZUMI-SHI MIYAGI-KEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Shinsuke 4-1-1501, Sakuragaoka-Koen, Sendai City, JP 3 57
Hirai, Toshio 4-91, Takamori 3-Chome, Izumi City, JP 42 522
Ohkubo, Akira Sendai, JP 3 103

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