Method for producing a single crystal
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Sep 6, 1983
Grant Date -
N/A
app pub date -
May 20, 1980
filing date -
May 31, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A single crystal is produced by contacting polycrystal showing a discontinuous crystal grain growth at a temperature not lower than T.degree.C to a seed single crystal having substantially the same crystal structure as the polycrystal and heating the contacted crystals at a temperature (t.degree.C) lower than the temperature T.degree.C to cause a solid phase reaction at an interface between microcrystal grains composing the polycrystal and the seed single crystal, whereby the microcrystal grains in the polycrystal are integrated to the seed single crystal to grow the single crystal.
First Claim
all claims..Other Claims data not available
Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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NGK INSULATORS LTD | JAPAN'S AICHI AICHI |
International Classification(s)

- 1980 Application Filing Year
- C30B Class
- 67 Applications Filed
- 0 Patents Issued To-Date
- 0 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Mase, Syunzo | Tobishima, JP | 41 | 839 |
# of filed Patents : 41 Total Citations : 839 | |||
Matsuzawa, Soichiro | Toyoake, JP | 33 | 266 |
# of filed Patents : 33 Total Citations : 266 |
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Patent Citation Ranking
- 10 Citation Count
- C30B Class
- 0 % this patent is cited more than
- 42 Age
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- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

Legal Events
Date | Code | Event | Description |
---|---|---|---|
Sep 06, 1983 | I | Issuance | |
Jul 08, 1983 | STCF | INFORMATION ON STATUS: PATENT GRANT | free format text: PATENTED CASE |
Jun 06, 1980 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:MATSUZAWA, SOICHIRO;MASE, SYUNZO;REEL/FRAME:003987/0131 Owner name: NGK INSULATORS, LTD., NO. 2-56. SUDA-CHO, MIZOHO-K Effective Date: Jun 06, 1980 |
May 20, 1980 | F | Filing | |
May 31, 1979 | PD | Priority Date |

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