Method for producing a single crystal

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United States of America Patent

PATENT NO 4402787
SERIAL NO

06151605

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A single crystal is produced by contacting polycrystal showing a discontinuous crystal grain growth at a temperature not lower than T.degree.C to a seed single crystal having substantially the same crystal structure as the polycrystal and heating the contacted crystals at a temperature (t.degree.C) lower than the temperature T.degree.C to cause a solid phase reaction at an interface between microcrystal grains composing the polycrystal and the seed single crystal, whereby the microcrystal grains in the polycrystal are integrated to the seed single crystal to grow the single crystal.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDJAPAN'S AICHI AICHI

International Classification(s)

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  • 1980 Application Filing Year
  • C30B Class
  • 67 Applications Filed
  • 0 Patents Issued To-Date
  • 0 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances19800255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mase, Syunzo Tobishima, JP 41 839
Matsuzawa, Soichiro Toyoake, JP 33 266

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  • 10 Citation Count
  • C30B Class
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