Method of manufacturing semiconductor device provided with complementary semiconductor elements
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United States of America Patent
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Jul 19, 1983
Grant Date -
N/A
app pub date -
Aug 26, 1980
filing date -
Sep 17, 1979
priority date (Note) -
Expired
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Abstract
The semiconductor device is provided with semiconductor elements having the complementary characteristics and high breakdown strength. These semiconductor elements are formed in N and P islands respectively each having an inverted frustum shape. Surfaces of the frustum are inclined by an angle determined by semiconductor crystal structure. Side and bottom surfaces of the islands are formed adjacent to an insulating layer and both islands are supported part from the polycrystalline semiconductor layer. All side and bottom surfaces of the islands adjacent the insulating layer are made of high impurity substance of the same type as respective islands.
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