Solid state image sensing device for enhanced charge carrier accumulation
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United States of America Patent
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May 24, 1983
Issued Date -
N/A
app pub date -
Oct 29, 1980
filing date -
Apr 8, 1977
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A so-called buried channel type solid state image sensing device is formed with a channel layer of the opposite conductivity type in the surface of a semiconductor substrate. An insulating layer is formed on the surface of the semiconductor substrate and spaced apart photo-electrode and a charge transfer electrode are buried in the insulating film and a shift electrode is buried therebetween. A channel layer is provided beneath the photoelectrode and the charge transfer electrode whereas no channel layer is formed beneath the shift electrode. But instead a portion of the surface of the semiconductor substrate is located beneath the shift electrode. Since no channel layer is provided beneath the shift electrode, a sufficient quantity of charge carriers is accumulated in a potential well formed in the channel layer beneath the photoelectrode.
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