Processing silicon wafers employing processing gas atmospheres of similar molecular weight
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United States of America Patent
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Mar 15, 1983
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N/A
app pub date -
Oct 27, 1981
filing date -
Oct 27, 1981
priority date (Note) -
Expired
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Abstract
At atmosphere X and an atmosphere Y, which may be an oxidizing atmosphere, are used in a process wherein silicon wafers are processed in a processing chamber, which is pressurized sequentially with a purging atmosphere, with the atmosphere X, and with the atmosphere Y displacing the atmosphere X excpet for a residual portion remaining with the atmosphere X and diminishing in concentration with time. As the atmosphere X has a molecular weight approximating the molecular weight of the atmosphere Y, stratification is minimized. If the atmosphere Y is steam, the atmosphere X may be a premixture of helium and oxyen.
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