Sputter-etching device
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United States of America Patent
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-
Sep 28, 1982
Grant Date -
N/A
app pub date -
Apr 21, 1981
filing date -
Apr 30, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A sputter-etching device has a hollow electrode with an internal space in which gas plasma is formed and an opening which is confronted with the inner wall of a vacuum chamber to provide an electric discharge gap therebetween. An object to be processed is placed on the side of the vacuum chamber instead of the side of the electrode. The sputter-etching device is combined with a sputtering device so that immediately after being cleaned by sputter-etching, the object is subjected to sputtering.
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