Charge splitting resistive layer for a semiconductor gamma camera
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United States of America Patent
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-
Sep 29, 1981
Grant Date -
N/A
app pub date -
Oct 19, 1979
filing date -
Oct 18, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is detected and then interpreted by a doctor while diagnosing the condition of that organ. The detector includes an improved electrical connection technique to allow the p-i-n diode to be connected to electronic circuitry necessary to provide spatial and energy information. In the improved camera first a passivation layer is deposited on both faces of the p-i-n diode and then a resistive layer is applied to form a reliable easily reproduced electrical contact to the junction. These two layers in combination prevent foreign matter from contacting the semiconductor material comprising the detector while providing interconnection to the electronic circuitry.
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