Method for initiating the float zone melting of semiconductors
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United States of America Patent
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Sep 29, 1981
Issued Date -
N/A
app pub date -
Mar 10, 1980
filing date -
Jul 7, 1977
priority date (Note) -
Expired
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Abstract
An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.
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