High-pressure, high-temperature gaseous chemical method for silicon oxidation
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United States of America Patent
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May 19, 1981
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N/A
app pub date -
Mar 29, 1979
filing date -
Mar 9, 1977
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Expired
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Abstract
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
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