High temperature refractory metal contact assembly and multiple layer interconnect structure
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United States of America Patent
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May 5, 1981
Issued Date -
N/A
app pub date -
Feb 22, 1979
filing date -
Apr 28, 1977
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Expired
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Abstract
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
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