Importance

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Abstract

The sputtering device disclosed herein is based on the fact that the lower the pressure of a gas atmosphere in which glow discharge is effected the smaller the number of chances for metallic atoms emitted from a target or cathode by sputtering to collide with residual molecules between the electrodes is, and the finer the finish of a metallic film formed by depositing the metallic atoms arriving directly to a workpiece is. Also, if the energy of electrons emitted from the target is reduced upon arrival at the anode, the temperature rise inside of the device and especially that of the workpiece can be minimized. The target and the anode are provided in the form of coaxial cylinders, and a magnet is disposed in the target in such a manner that the direction of the magnetic field orthogonally crosses that of the electric field, so that the electro-magnetic force encloses the electrons in an electrode space to increase the density of electrons therein, whereby sputtering is effectively carried out even in a gas atmosphere of extremely low pressure and direct collision of the electrons with the anode is prevented, thereby minimizing the temperature rise of the work-piece.

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First Claim