Gas-phase process for the production of an epitaxial layer of indum phosphide
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United States of America Patent
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Sep 2, 1980
Grant Date -
N/A
app pub date -
Mar 6, 1979
filing date -
Mar 7, 1978
priority date (Note) -
Expired
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Abstract
A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.
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