SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Mar 19, 2024
filing date -
Mar 19, 2024
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Abstract
A semiconductor device may include an access line, a variable resistance layer, an electrode located between the access line and the variable resistance layer, and a barrier structure located between the access line and the electrode and including an amorphous barrier. The barrier structure may further include a diffusion barrier, and the amorphous barrier has a resistivity higher than that of the diffusion barrier.
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