MULTI-TAPERED MRAM DEVICE STRUCTURE
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Oct 10, 2023
filing date -
Oct 10, 2023
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Abstract
A magnetoresistive random access memory (MRAM) includes a pillar structure having a bottom electrode and a magnetic tunnel junction (MTJ) having a reference layer, a free layer and a tunnel barrier disposed between the reference layer and the free layer. The MTJ is disposed on the bottom electrode. A top electrode is disposed on the MTJ. The top electrode includes two or more tiers wherein each tier successively includes a smaller footprint.
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