PHOTODIODE WITH AN INTERFACE REGION TO REDUCE A BAND OFFSET BETWEEN A CARRIER GENERATING REGION AND A DOPED REGION
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Sep 4, 2024
filing date -
Sep 4, 2024
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Abstract
A photodiode comprises a carrier generating region of a semiconductor having a bandgap that absorbs light of a given wavelength, such that electrical charge carriers are generated therein. The photodiode further comprises n-doped and a p-doped semiconductor regions having respective bandgaps higher than the bandgap of the carrier generating region, the respective bandgaps being transparent to the light of the given wavelength, the n n-doped and a p-doped semiconductor regions being along different sides of the carrier generating region. The photodiode further comprises an interface region between the carrier generating region and a given doped region of n-doped and a p-doped semiconductor regions, the interface region comprising one or more of a semiconductor alloy and a semiconductor sequence that is one or more of graded and stepped in composition, selected to reduce a band offset between the carrier generating region and the given doped region adjacent the interface region.
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