SEMICONDUCTOR DEVICE INCLUDING GATE OXIDE LAYER
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Dec 17, 2024
filing date -
Dec 17, 2024
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Abstract
A semiconductor device includes a semiconductor substrate, a first gate oxide layer, and a first source/drain doped region. The first gate oxide layer is disposed on the semiconductor substrate, and the first gate oxide layer includes a main portion and an edge portion having a sloping sidewall. The first source/drain doped region is disposed in the semiconductor substrate and located adjacent to the edge portion of the first gate oxide layer. The first source/drain doped region includes a first portion and a second portion. The first portion is disposed under the edge portion of the first gate oxide layer in a vertical direction, and the second portion is connected with the first portion.
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