BIPOLAR JUNCTION TRANSISTOR (BJT) AND FABRICATING METHOD THEREOF
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Dec 16, 2024
filing date -
Dec 16, 2024
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Abstract
Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a plurality of base regions formed over the collector region, a plurality of emitter regions formed over the collector region, a ring-shaped shallow trench isolation (STI) region formed in the collector region, a plurality of base conductive layers formed over the collector region and on opposite sides of the base regions, a plurality of sidewall dielectric layers formed on top surfaces of the base conductive layers and disposed vertically between the base conductive layers and upper portions of the emitter regions, and a plurality of base contacts formed on the base conductive layers. The base contacts are divided into a first group of base contacts disposed between the base regions and a second group of base contacts disposed between the base regions and the STI region.
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