HIGH-ELECTRON-MOBILITY TRANSISTOR
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United States of America Patent
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Issued Date -
Apr 10, 2025
app pub date -
Oct 4, 2023
filing date -
Oct 4, 2023
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.
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