THIN FILM STRUCTURE AND METHOD OF MANUFACTURING THE THIN FILM STRUCTURE

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United States of America

APP PUB NO 20250120150A1
SERIAL NO

18674359

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Abstract

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A thin film structure according to various example embodiments includes a first buffer layer, a transition metal dichalcogenide layer on the first buffer layer, and a second buffer layer on the transition metal dichalcogenide layer, wherein the second buffer layer includes same chalcogen element as a chalcogen element included in the transition metal dichalcogenide layer.

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Patent Owner(s)

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SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JUNG, Alum Suwon-si, KR 20 76
PARK, Baekwon Suwon-si, KR 3 0
SEOL, Minsu Suwon-si, KR 77 164
YOO, Minseok Suwon-si, KR 25 5
YOUN, Hyungjun Suwon-si, KR 1 0

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