SUPERJUNCTION SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 10, 2025
app pub date -
Sep 19, 2024
filing date -
Sep 19, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A semiconductor device includes, in an active region and a termination region of a semiconductor substrate, a parallel pn layer in which regions of a first conductivity type and regions of a second conductivity type are disposed repeatedly alternating with each other. The semiconductor device further includes a third semiconductor region of the second conductivity type, configuring a voltage withstanding structure, in the termination region. Each of the regions of the second conductivity type includes multiple sub-regions stacked on one another, the multiple sub-regions including a topmost subregion that is closest to a first main surface of the semiconductor substrate. The third semiconductor region is formed at least partially by the plurality of topmost sub-regions in the termination region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully