GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING DEEP SUPPORT SHIELDS AND METHODS OF FABRICATING SUCH DEVICE
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Oct 6, 2023
filing date -
Oct 6, 2023
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Abstract
A semiconductor device comprises a silicon carbide based semiconductor layer structure that includes a drift layer having a first conductivity type, a gate trench that extends to a first depth into an upper surface of the semiconductor layer structure, a gate electrode in the gate trench, a support shield trench that extends to a second depth into the upper surface of the semiconductor layer structure, where the second depth is less than the first depth, and a source metallization layer on the upper surface of the semiconductor layer structure and extending into the support shield trench.
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