SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
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United States of America
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Apr 10, 2025
app pub date -
Sep 4, 2024
filing date -
Sep 4, 2024
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Abstract
Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a source electrode provided on a substrate, a drain electrode disposed away from the source electrode, and a channel connected between the source electrode and the drain electrode, wherein the channel includes a plurality of first channel layers and plurality of second channel layers, and the gate electrode is provided on one surface and another surface of each of the plurality of the first channel layers and on one surface and another surface of each of the plurality of the second channel layers.
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