SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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United States of America
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Apr 10, 2025
app pub date -
Oct 6, 2023
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Oct 6, 2023
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Abstract
A semiconductor structure includes a metal gate structure and an isolation structure adjacent to the metal gate structure. The isolation structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer and a third dielectric layer over the second dielectric layer. The first dielectric layer includes carbon of a first concentration, the second dielectric layer includes carbon of a second concentration, and the third dielectric layer includes carbon of a third concentration. The third concentration is greater than the second concentration, and the second concentration is greater than the first concentration.
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