Importance

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Abstract

A method for fabricating a GAA nanosheet structure, comprising: forming at least two channel layers and at least one sacrificial layer alternately stacked on a substrate to form a channel stack; forming, on the substrate, a dummy gate astride the channel stack; forming a first sidewall on a surface of the dummy gate; etching the sacrificial layer to form a recess at a side surface of the channel stack; forming a second sidewall within the recess; forming a source and a drain at two sides of the channel stack; in response to a channel layer being in contact with the dummy gate, etching the dummy gate and the channel layer to expose the at least one sacrificial layer, and then etching the at least one sacrificial layer to form a space for manufacturing a surrounding gate; and forming a metallic surrounding gate in the space.

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First Claim