Importance

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Abstract

A nonvolatile memory device includes a peripheral circuit structure including a peripheral circuit, and a lower insulating structure on the peripheral circuit, a cell array structure having a cell area and a peripheral connection area and including an upper insulating structure in contact with the lower insulating structure, a cell stack in the cell area on the upper insulating structure, a common source line layer on the cell stack and having a common source opening, a plurality of cell channel structures extending in a vertical direction in the cell stack and into the common source line layer, and a support structure extending in the vertical direction in the cell stack and into the common source opening, and a pad pattern extending from the peripheral connection area to the cell area on the cell array structure and overlapping the support structure in the vertical direction.

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First Claim