MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America
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Apr 10, 2025
app pub date -
Mar 15, 2024
filing date -
Mar 15, 2024
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Abstract
A memory device, and a method of manufacturing the same, includes a gate stack formed on a cell region and a pass transistor region, a plurality of cell plugs extending in a vertical direction in the gate stack of the cell region, a plurality of gate contact structures extending in the vertical direction by passing through the gate stack of the pass transistor region, and a plurality of pass transistors connected to the plurality of respective gate contact structures. Each of the plurality of pass transistors has a cylindrical shape structure.
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