MILLIMETER-WAVELENGTH POWER AMPLIFIERS HAVING BOTH HIGH POWER GAIN AND HIGH OUTPUT POWER
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Dec 16, 2024
filing date -
Dec 16, 2024
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Abstract
A power amplifier (amp) includes a first transistor configured in the common source (CS) amplification mode, wherein the gate terminal of the first transistor is the input port of the power amp; and a second transistor configured in the common gate (CG) amplification mode, wherein the drain terminal of the second transistor is the output port of the power amp. The power amp also includes a first inductive component coupled between the drain terminal of the first transistor and the ground to increase the impedance between the drain terminal of the first transistor and the ground, thereby increasing an output power at the output port. The power amp additionally includes a second inductive component coupled between the drain terminal of the first transistor and the source terminal of the second transistor to increase the conductance in the output admittance at the output port, thereby further increasing the output power.
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