SEMICONDUCTOR LASER ELEMENT
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Dec 17, 2024
filing date -
Dec 17, 2024
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Abstract
A semiconductor laser element includes a semiconductor stack body that emits a laser beam, an emission side protective layer that is disposed on a laser beam emission side end surface of the semiconductor stack body, and has a first end surface through which the laser beam travels; and a non-emission side protective layer that is disposed on a non-emission side end surface of the semiconductor stack body opposite to the laser beam emission side end surface and reflects the laser beam. A reflectivity at an oscillation wavelength of the laser beam in the emission side protective layer before an oxide containing silicon adheres to the first end surface is higher than a reflectivity at an oscillation wavelength of the laser beam in the emission side protective layer after the oxide adheres to the first end surface.
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