TRANSMISSION DEVICE AND PREPARATION METHOD THEREFOR, AND QUANTUM DEVICE INTEGRATION COMPONENT AND QUANTUM COMPUTER
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Jan 18, 2024
filing date -
Jan 18, 2024
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Abstract
a transmission device and the fabricating method therefor, a quantum device integration component and a quantum computer, and belongs to the field of quantum information. The transmission device includes: a substrate; a micro-strip line layer formed on the substrate; a dielectric layer formed on the micro-strip line layer; and a ground layer and a port pad formed on the dielectric layer, wherein the ground layer is electrically connected to a ground plate of the micro-strip line layer, and the port pad is electrically connected to a conductor strip of the micro-strip line layer. The transmission device can be fabricated based on the existing integrated circuit fabricating process. In this transmission device, the micro-strip line layer can have a multi-layer stacking arrangement, so that high-density wiring on the substrate with a limited area can be achieved to adapt to the packaging needs of large-scale quantum chips.
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