FIELD EFFECT TRANSISTOR WITH ALIGNMENT MARK AND RELATED METHODS
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Oct 10, 2023
filing date -
Oct 10, 2023
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Abstract
A method includes: forming a first mask over a substrate; forming first openings and a second opening in the first mask; forming first wells in first regions of the substrate exposed by the first openings and an alignment implant in a second region of the substrate exposed by the second opening; forming an alignment mark by recessing the alignment implant; and patterning a multi-layer semiconductor lattice under alignment of the alignment mark.
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