Importance

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Abstract

The present disclosure generally provides for a high electron mobility transistor or HEMT. An example HEMT includes a first semiconductor layer; a gate arranged on a first surface of the first semiconductor layer; a first passivation layer comprising at least a sub-layer of a first dielectric material on the sides of the gate, the first passivation layer further extending over a first portion of the surface of the first semiconductor layer; and a second passivation layer, distinct from the first passivation layer, comprising at least a sub-layer of the same first dielectric material on a second portion of the surface of the first semiconductor layer next to the first passivation layer.

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First Claim