INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF

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United States of America

APP PUB NO 20250118598A1
SERIAL NO

18376594

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Abstract

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An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Hsiao-Kang Hsinchu, TW 59 103
CHEN, Hsin-Ping Hsinchu, TW 59 108
CHU, Wei-Chen Hsinchu, TW 43 138
HUANG, Hsin-Yen Hsinchu, TW 128 185
KU, Shu-Yun Hsinchu, TW 2 0
LEE, Cheng-Chin Hsinchu, TW 85 67
LEE, Ming-Han Hsinchu, TW 171 447
LEE, Shao-Kuan Hsinchu, TW 95 123
LIU, Gary HSU WEI Hsinchu, TW 1 0
LO, Ting-Ya Hsinchu, TW 45 30
SU, Jing-Ting Hsinchu, TW 2 0
TENG, Chi-Lin Hsinchu, TW 61 126
WU, Chia-Tien Hsinchu, TW 123 302
WU, Yen-Ju Hsinchu, TW 12 4
YANG, Kuang-Wei Hsinchu, TW 23 9

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