BOW MITIGATION IN HIGH ASPECT RATIO OXIDE AND NITRIDE ETCHES
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Oct 6, 2023
filing date -
Oct 6, 2023
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Abstract
Methods of semiconductor processing may include forming plasma effluents. The plasma effluents may then contact a carbon-containing hardmask and an oxide cap. The plasma effluents can etch one or more features in the oxide cap through one or more apertures of the carbon-containing hardmask. Etching can create a tapered profile for one or more features in the oxide cap. The one or more features can be characterized by a critical dimension at the bottom of the one or more features. The critical dimension can be less than or about 80% of a width of the one or more apertures.
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