METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Nov 16, 2023
filing date -
Nov 16, 2023
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Abstract
A method for fabricating a semiconductor device includes steps as follows. A gate structure is formed on a substrate. A fluorine-containing dopant is implanted into the substrate to form two lightly doped drain regions at two sides of the gate structure. A thermal treatment process is performed, in which a part of fluorine atoms of the fluorine-containing dopant diffuse onto a surface of the substrate. The part of fluorine atoms are removed.
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