SELECTIVE HARDMASK ETCH FOR SEMICONDUCTOR PROCESSING
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Oct 5, 2023
filing date -
Oct 5, 2023
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Abstract
Methods of semiconductor processing may include forming plasma effluents of a hydrogen-and-fluorine-containing precursor. The plasma effluents may then contact a silicon-containing hardmask material and a photoresist material. The silicon-containing hardmask material can overlay an organic material overlaying a substrate in a processing region of a semiconductor processing chamber. Etching the silicon-containing hardmask material with the plasma effluents while the photoresist material with the plasma effluents. The silicon-containing hardmask material can be etched at a selectivity greater than or about 10 relative to the photoresist material. A temperature in the processing region can be maintained at about −20° C. or less.
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