METHOD FOR FORMING DEPOSITION FILM
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 10, 2025
app pub date -
Oct 7, 2022
filing date -
Oct 7, 2022
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Provided is a method for forming a deposition film, with which a deposition film having improved uniformity of a film thickness can be formed. The method for forming a deposition film is a method for forming a deposition film on a substrate (21) on which a pattern (22) is formed, and the method includes a deposition step of placing the substrate (21) on an electrode and applying bias power to the electrode to form a deposition film (40) on the substrate (21) using plasma obtained by plasma-processing a deposition gas. A material constituting the pattern (22) is at least one of a carbon-containing material, a silicon-containing material, and a metal-containing material. In addition, the deposition gas contains unsaturated halon. The unsaturated halon is an unsaturated compound which has a fluorine atom, a bromine atom, and a carbon atom in a molecule and has 2 or 3 carbon atoms. Further, a power density of the bias power applied to the electrode is more than 0 W/cm2 and 0.5 W/cm2 or less.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully