SEED CRYSTAL SUBSTRATE AND GRAPHITE SUSCEPTOR WITH SEED CRYSTAL SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250118551A1
SERIAL NO

18783732

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Abstract

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A seed crystal substrate includes: a substrate having a GaN seed crystal on a front surface thereof; an adhesion layer formed on a back surface of the substrate; and a carbon film covering the adhesion layer. The substrate includes a GaN single crystal substrate or a sapphire substrate with a GaN film, and the adhesion layer contains Si. Thus, a carbon film having a high infrared emissivity is disposed on a back surface side of the seed crystal substrate, and heat dissipation by radiation can be sufficiently secured even under a low pressure condition. Therefore, the controllability of the substrate surface temperature can be enhanced.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO41-1 YOKOMICHI NAGAKUTE-SHI AICHI 4801192 ?4801192

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itoh, Kenji Nagakute-shi, JP 149 2446
NAKAMURA, Daisuke Nagakute-shi, JP 272 2169

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