HEAT DISSIPATION FOR FIELD EFFECT TRANSISTORS
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 10, 2025
app pub date -
Jan 3, 2024
filing date -
Jan 3, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Semiconductor devices and methods of forming the same are provided. A method of the present disclosure includes depositing an aluminum nitride layer over a substrate, treating the aluminum nitride layer to convert a top portion of the aluminum nitride layer to an aluminum oxynitride layer, depositing a III-V semiconductor layer on the aluminum oxynitride layer, and forming a gate structure over the III-V semiconductor layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully