MICROWAVE HIGH-DENSITY PLASMA FOR SELECTIVE ETCH
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 10, 2025
app pub date -
Oct 10, 2023
filing date -
Oct 10, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Semiconductor processing systems and methods for increased etch selectivity and rate are provided. Methods include etching a target material of a semiconductor substrate by flowing one or more plasma precursors through a microwave applicator into a remote plasma region of a semiconductor processing chamber. Generating a remote plasma within the remote plasma region at a microwave frequency, where the generated remote plasma comprises a density of greater than 1×1010 per cm3, an ion energy of less than or about 50 eV, or a combination thereof. Flowing the plasma effluents into a processing region of the semiconductor processing chamber. The microwave applicator includes a resonator body and a plate, where the resonator body is formed from or coated with a first dielectric material and the plate is formed from or coated with a second dielectric material.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully