SYSTEM AND METHOD FOR PLASMA PROCESSING

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250118532A1
SERIAL NO

18434253

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Abstract

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A method for plasma processing includes biasing a substrate by ramping a sheath voltage during a first phase of a plasma process and removing sidewall charge buildup on a feature of the substrate in an absence of substrate biasing during a second phase of the plasma process.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ko, Akiteru Albany, US 72 1152
Smieszek, Nicholas Albany, US 1 0
Smith, Carl Albany, US 18 653
Voronin, Sergey Albany, US 36 172
Wang, Qi Albany, US 814 5281

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