APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250118352A1
SERIAL NO

18746447

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Abstract

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Single (1 T) and multi (MT) memory cell architectures may be included in a same memory array. In some embodiments, the individual memory cells of the MT memory cells may have a same polarity. In some embodiments, the individual memory cells of the MT memory cells may have complementary polarity. In some examples, digit lines at memory mats and edge memory mats may be folded for MT memory cells. In some examples, digit lines may be rerouted through local input-output line breaks for the MT memory cells. In some examples, the LIO lines from the MT memory cells may be twisted. In some examples, larger sense amplifiers may be used for the MT memory cells.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC2805 EAST COLUMBIA ROAD BOISE ID 83706

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawamura, Christopher J Boise, US 35 431
Kim, Kang-Yong Boise, US 136 518
Lu, Yang Boise, US 395 2607
Robbs, Toby D Boise, US 11 12

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