SIGNAL GENERATOR FOR CONTROLLING TIMING OF SIGNAL IN MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250118346A1
SERIAL NO

18984571

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Abstract

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A device includes a first memory subarray, a first modulation circuit, a second memory subarray, a second modulation circuit and a control signal generator. The first modulation circuit is coupled to the first memory subarray. The second memory subarray is located between the first memory subarray and the first modulation circuit along a direction. The second modulation circuit is coupled to the second memory subarray. The control signal generator is configured to generate a first control signal to trigger the first modulation circuit according to a first length of the first memory subarray along the direction, and configured to generate a second control signal to trigger the second modulation circuit according to a second length of the second memory subarray along the direction.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300
TSMC CHINA COMPANY LIMITED4000 WEN XIANG RD SONGJIANG SHANGHAI
TSMC NANJING COMPANY LIMITED16 ZIFENG ROAD PUKOU ECONOMIC DEVLOPMENT ZONE JIANGSU PROVINCE NANJING

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHANG, Ming-Hung Hsinchu City, TW 64 267
KONG, Lu-Ping Nanjing City, CN 12 3
WAN, He-Zhou Shanghai City, CN 54 55
YANG, Xiu-Li Shanghai City, CN 35 21
YE, Mu-Yang Nanjing City, CN 9 4

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