METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING STANDARD-CELL-ADAPTED POWER GRID ARRANGEMENT
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United States of America
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Apr 10, 2025
app pub date -
Dec 16, 2024
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Dec 16, 2024
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Abstract
A method of forming an integrated circuit device includes forming first segments extending in a first direction in a first conductive layer; forming second segments extending in the first direction in the first conductive layer, the forming the first and second segments including: interspersing the first and second segments relative to a second direction perpendicular to the first direction such that: the first segments are symmetrically spaced apart relative to each other, the second segments are symmetrically spaced apart relative to each other, and ones of the second segments are substantially asymmetrically spaced between corresponding adjacent ones of the first segments.
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