Multiple Power Domains Using Nano-sheet Structures

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250117563A1
SERIAL NO

18982045

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Abstract

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One aspect of this description relates to an integrated circuit (IC) structure including a first layer and a second layer. The first layer includes a first metal structure coupled to a first power supply having a first voltage level and a second metal structure coupled to a second power supply having a second voltage level different from the first voltage level. The second layer is formed over the first layer. The second layer includes a first nano-sheet device coupled to the first metal structure and a second nano-sheet device adjacent to the first nano-sheet device. The second nano-sheet device is coupled to the second metal structure. A distance between the first nano-sheet device and the second nano-sheet device is less than a minimum n-well to n-well spacing.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN 6 ROAD HSINCHU SCIENCE PARK HSINCHU ROC 30077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jack Taipei, TW 127 918
Yang, Kuo-Nan Hsinchu City, TW 142 964

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