STRUCTURE AND TECHNIQUE OF PHOTO-DEFINED SEMICONDUCTOR DEVICE WITH SELECTIVE DIELECTRIC CONSTANT REDUCTION
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United States of America
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Apr 10, 2025
app pub date -
Oct 6, 2023
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Oct 6, 2023
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Abstract
A semiconductor device may include a substrate. The semiconductor device may also include a dielectric material characterized, at least in part, by a dielectric constant. The semiconductor device may include a metallic pathway formed in the dielectric material. The semiconductor device may include a region about the metallic pathway of the semiconductor device may include a plurality of air gaps within the dielectric material and arranged three-dimensionally throughout the region, where the region may include a lower dielectric constant than the dielectric constant of the dielectric material.
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