TRANSISTOR AND MANUFACTURING METHOD FOR TRANSISTOR
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United States of America
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Issued Date -
Apr 10, 2025
app pub date -
Sep 12, 2024
filing date -
Sep 12, 2024
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Abstract
A transistor includes a semiconductor portion extending in a first direction, a first electrode extending in a second direction intersecting the first direction and is disposed overlapping a portion of the semiconductor portion, a first insulating film that is interposed between the first electrode and the semiconductor portion, a second electrode that is connected to the semiconductor portion, and a third electrode that is connected to the semiconductor portion, in which the first insulating film includes a first thick portion and a second thick portion having a film thickness greater than that of the first thick portion, at least two of the first thick portions are disposed at intervals in the second direction at positions overlapping both the first electrode and the semiconductor portion, and the second thick portion is disposed to be interposed between the two first thick portions in the second direction at a position overlapping both the first electrode and the semiconductor portion.
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