Substrate Processing Method, Method of Manufacturing Semiconductor Device, Non-transitory Computer-readable Recording Medium and Substrate Processing Apparatus

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250115996A1
SERIAL NO

18905713

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Abstract

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According to the present disclosure, it is possible to suppress a change in a state of a gas. There is provided a technique that includes: (a) adjusting at least one selected from the group of a pressure and a temperature of a buffer space in a buffer chamber when the temperature of the buffer space is out of a pre-set temperature range or the pressure of the buffer space is out of a pre-set pressure range; and (b) processing a substrate by supplying a gas via the buffer chamber to a process chamber in which the substrate is processed.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI ELECTRIC CORPORATION3-4 KANDA-KAJICHO CHIYODA-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
OHASHI, Naofumi Toyama, JP 148 697
YAMAMOTO, Kaoru Toyama, JP 239 5624

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