PIEZOELECTRIC THIN-FILM, PIEZOELECTRIC THIN-FILM MANUFACTURING DEVICE, PIEZOELECTRIC THIN-FILM MANUFACTURING METHOD, AND FATIGUE ESTIMATION SYSTEM

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United States of America

APP PUB NO 20250113739A1
SERIAL NO

18724863

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Abstract

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A piezoelectric thin film having better FoM and piezoelectric strain constant, a manufacturing apparatus and manufacturing method, and a fatigue estimation system using the film; wherein, the piezoelectric thin film is made of (MgHf)xAl1-xN in which Mg and Hf are co-doped into the Al site of AlN, where x is 0.3 or more and 0.49 or less, and has a figure of merit (FoM) of 45 GPa or more and a piezoelectric strain constant (d33) of 18 pm/V or more. Multiple first pieces made of Mg and multiple second pieces made of Hf are on the surface of a target made of AlN wherein an average surface area of each first piece is 0.9 to 1.1 times an average surface area of each second piece with respect to a surface area of the target, and a piezoelectric thin film is grown on a substrate by magnetron sputtering.

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Patent Owner(s)

Patent OwnerAddress
TOHOKU UNIVERSITYSENDAI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KATO, Tadashi Sendai-shi, JP 41 717
KONNO, Riyo Sendai-shi, JP 1 0
KUWANO, Hiroki Sendai-shi, JP 6 23
LE, Van Minh Sendai-shi, JP 1 0
NGUYEN, Hoang Hung Sendai-shi, JP 1 0
TAKAMAYA, Yosuke Sendai-shi, JP 1 0

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